15 Watt RF Power output in VHF Transmitters up to 175MHz	TO-60 Case
WINTransceiver	C  B  E

Absolute Maximum Ratings:

Collector-Base Voltage, VCB	65V
Collector-Emitter Voltage, VCEO	40V
Emitter-Base Voltage, VEB	4V
Collector Current, IC	3A
Total Device Dissipation (TC = +25°C), PD              Derate Above 25°C	23W 131mW/°C
Operating Junction Temperature Range, TJ	-65° to +200°C
Storage Temperature Range, Tstg	-65° to +200°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage	V(BR)CEO(sus)	IC = 200mA, IB = 0, Note 1	40	-	-	V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE = 0.25mA, IC = 0	4	-	-	V
Collector Cutoff Current	ICEO	VCE = 30V, IB = 0	-	-	0.25	mA
	ICEX	VCE = 30V, VBE(off) = 1.5V, TC = +200°C	-	-	10	mA
		VCE = 65V, VBE(off) = 1.5V	-	-	5	mA
	ICBO	VCB = 65V, IE = 0	-	-	1	mA
Emitter Cutoff Current	IEBO	VBE = 4V, IB = 0	-	-	0.25	mA
ON Characteristics
DC Current Gain	hFE	VCE = 5V, IC = 1A	5	-	-
Collector-Emitter Saturation Voltage	VCE(sat)	IC = 500mA, IB = 100mA	-	-	1.0	V
Base-Emitter Saturation Voltage	VBE(sat)	IC = 1A, IB = 5A	-	-	1.5	V
Dynamic Characteristics
Current Gain-Bandwidth Product	fT	VCE = 28V, IC = 150mA, f = 100MHz	-	400	-	MHz
Output Capacitance	Cob	VCB = 30V, IE = 0, f = 100kHz	-	16	20	pF
Functional Tests
Power Input	Pin	VCE = 28V, Pout = 2.5W, f = 175MHz	-	-	0.25	W
Common-Emitter Amplifier Power Gain	Gpe		10	-	-	dB
Collector Efficiency			50	-	-	%

Note 1. Pulsed through 25mH inductor.